The RF Gallium Nitride Market Size is valued at USD 1.27 Bn in 2022 and is predicted to reach USD 3.59 Bn by the year 2031 at a 12.3 % CAGR during the forecast period for 2023-2031.
Radiofrequency semiconductors made of gallium nitride have dynamic chemical and electrical features, including high voltage breakdown and saturation velocity. It is widely employed in the automotive and energy industries and has low power consumption and excellent efficiency characteristics. The key element driving the market's growth during the anticipated period will be the increase in semiconductor industry innovation.
Furthermore, the market will have growth prospects due to technical developments and increasing product utilization in the automotive and energy industries. One of the main elements driving the demand for RF GaN devices is the increased adoption of 5G technology, as these devices are essential for 5G networks to provide the requisite coverage, data speeds, and spectral efficiency.
Furthermore, the RF GaN market is expanding due to various causes, including the rising demand for faster data rates, improved network capacity, and the deployment of tiny cells. The RF Gan-based devices are also commonly utilized in marine radar systems for target recognition, navigation, and collision avoidance. To maintain reliable communication linkages between marine vessels and satellite networks, better power output and efficient operation are other critical functions of the RF GAN technology. The marine industry's growing investments and new.
Additionally, the benefits of GaN semiconductor devices over silicon devices are to blame for the market's expansion. Electronic products such as smartphones, computers, cameras, and televisions have all been made using silicon. The rising number of electric vehicles worldwide is expected to drive the market. This is due to GaN's ability to help automakers shorten charging times, increase cost-effectiveness, boost power density, and extend the range of their vehicles.
Competitive Landscape:
Some major key players in the RF Gallium Nitride Market:
- Sumitomo Electric Device Innovations, Inc. (Japan),
- Qorvo, Inc. (U.S.),
- WOLFSPEED, INC. (US),
- NXP Semiconductors (Netherlands),
- MACOM (U.S.),
- Infineon Technologies AG (Germany),
- ROHM Co., Ltd. (Japan),
- Texas Instruments Incorporated (Texas),
- Toshiba Corporation (Japan),
- STMicroelectronics N.V. (Switzerland)
Market Segmentation:
The RF Gallium Nitride market is segmented based on device type. Wafer size, application and end users. The market is segmented as discrete RF and integrated RF devices based on product. The market is segmented by wafer size into 200mm and 200 and more. Based on end users, the RF Gallium Nitride market is segmented as telecom infrastructure, satellite communication, military and defence, etc.
Based On The Product, The Satellite Communication Segment Is A Major Contributor To The RF Gallium Nitride Market
The satellite communication category will hold a major share of the global RF Gallium Nitride market in 2022. The demand for satellite communication in the RF Gallium Nitride (GaN) market is rising. Satellite communication is crucial in enabling global connectivity, providing a huge range of applications such as broadband internet access, television broadcasting, navigation systems, weather monitoring, and remote sensing.
With the growing demand for data-intensive applications, there is an increasing need for higher data rates and wider bandwidth in satellite communication systems. GaN-based RF devices offer excellent power efficiency, high output power, and wide bandwidth capabilities, making them well-suited for high-speed data transmission in satellite communication. GaN technology enables satellite systems to handle larger volumes of data, supporting applications such as high-definition video streaming, broadband internet access, and real-time data transfer.
The Discrete RF Device Segment Witnessed Growth At A Rapid Rate
The discrete RF segment is projected to develop rapidly in the global RF Gallium Nitride market. The demand for RF discrete devices in the RF Gallium Nitride (GaN) market is rising due to several factors. RF discrete devices refer to components such as transistors, diodes, and amplifiers used in RF applications. GaN-based RF discrete devices offer superior power handling capabilities and high-frequency performance compared to traditional semiconductor technologies. They can operate at higher voltages and frequencies, delivering higher power output and efficiency. This makes GaN-based RF discrete devices ideal for high-power and bandwidth applications, such as wireless communication, radar systems, and satellite communication.
The North American RF Gallium Nitride Market Holds A Significant Revenue Share In The Region
The North America RF Gallium Nitride market is projected to register a maximum market share in revenue shortly. The region has several leading GaN device manufacturers, suppliers, and research institutions. The market size is expected to expand further due to increasing demand for high-performance and power-efficient RF devices in various sectors, including defence, aerospace, telecommunications, and automotive.
In addition, Europe is expected to grow rapidly in the global RF Gallium Nitride market. Europe has a strong aerospace and defence industry presents significant opportunities for the RF GaN market. GaN technology offers advantages such as high power density, wide bandwidth, and robust performance under harsh environments. It is well-suited for radar systems, electronic warfare, satellite communication, and other defence applications. The demand for GaN-based RF devices in Europe's aerospace and defence sector will remain robust.
RF Gallium Nitride Market Report Scope:
|
Report Attribute |
Specifications |
|
Market size value in 2022 |
USD 1.27 Bn |
|
Revenue forecast in 2031 |
USD 3.59 Bn |
|
Growth rate CAGR |
CAGR of 12.3 % from 2023 to 2031 |
|
Quantitative units |
Representation of revenue in US$ Bn and CAGR from 2023 to 2031 |
|
Historic Year |
2019 to 2022 |
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Forecast Year |
2023-2031 |
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Report coverage |
The forecast of revenue, the position of the company, the competitive market structure, growth prospects, and trends |
|
Segments covered |
By Device Type, By Wafer Size, By End-User |
|
Regional scope |
North America; Europe; Asia Pacific; Latin America; Middle East & Africa |
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Country scope |
U.S.; Canada; U.K.; Germany; China; India; Japan; Brazil; Mexico ;The UK; France; Italy; Spain; China; Japan; India; South Korea; South East Asia; South Korea; South East Asia |
|
Competitive Landscape |
Sumitomo Electric Device Innovations, Inc. (Japan), Qorvo, Inc. (US), WOLFSPEED, INC. (US), NXP Semiconductors (Netherlands), MACOM (US), Infineon Technologies AG (Germany), ROHM Co., Ltd. (Japan), Texas Instruments Incorporated (Texas), Toshiba Corporation (Japan), STMicroelectronics N.V. (Switzerland) |
|
Customization scope |
Free customization report with the procurement of the report, Modifications to the regional and segment scope. Particular Geographic competitive landscape. |
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Pricing and available payment methods |
Explore pricing alternatives that are customized to your particular study requirements. |
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