GaN Semiconductor Device Market Size is valued at USD 20.50 Bn in 2023 and is predicted to reach USD 32.92 Bn by the year 2031 at a 6.23% CAGR during the forecast period for 2024-2031.
Key Industry Insights & Findings from the Report:
- The GaN Semiconductor Device market is witnessing significant consolidation activities, with key players focusing on strategic partnerships, acquisitions, and product innovations to strengthen their market presence.
- GaN-on-Silicon (GaN-on-Si) technology is gaining traction due to its cost-effectiveness and compatibility with existing silicon fabrication processes, particularly in power electronics applications.
- By Application, Aerospace and Defense holds the largest share in the market
- The Asia Pacific regional market is projected to dominate the GaN Semiconductor Device market during the forecast period, attributed to the presence of major semiconductor manufacturers and increasing investments in infrastructure development across industries
Gallium nitride (GaN) is a semiconductor with dynamic chemical and electrical properties such as high voltage breakdown and saturation velocity. As a result, they are suitable for use in a wide range of switching devices. Because of its reduced power consumption and enhanced temperature tolerance and efficiency, gallium nitride is predicted to be a silicon substitute. Thus, gallium nitride semiconductor devices and their applications in inverters, electric vehicles, smart grid systems, communication devices, and other fields are gaining popularity.
One of the key reasons fueling the market for GaN semiconductor device applications and their use in consumer electronics and the automotive industries is the broadband gap quality of GaN, which leads to its employment in novel semiconductor devices. Furthermore, its increased use in R.F. power applications has positively impacted market growth. The rise in demand and utilization of these devices in the aerospace, medical, military, and other industries is expected to drive the market even more.
However, the COVID-19 pandemic has resulted in lockdowns in a number of major economies. As a result, electronic goods sales have decreased, and supply networks have been disrupted. Furthermore, many economies are incurring considerable revenue losses as manufacturing facilities close due to lockdowns.
Competitive Landscape:
Some Major Key Players In The GaN Semiconductor Device Market:
- Wolfspeed, Inc. (U.S.)
- Qorvo, Inc. (US.)
- MACOM Technology Solutions Holdings, Inc. (US.)
- Infineon Technologies AG (Germany)
- Sumitomo Electric Industries, Ltd. (Japan)
- Mitsubishi Electric Group (Japan)
- NexGen Power Systems. (US.)
- GaN Systems (Canada)
- Efficient Power Conversion Corporation (US.)
- Odyssey Semiconductor Technologies, Inc. (US.)
- ROHM Co., Ltd. (Japan)
- STMicroelectronics NV (Switzerland)
- NXP Semiconductors NV (Netherlands)
- Transphorm, Inc.,
- Analog Devices, Inc.,
- Texas Instruments Incorporated,
- Navitas Semiconductor,
- Microchip Technology Incorporated,
- Powdec,
- Northrop Grumman Corporation,
- Shindengen Electric Manufacturing Co., Ltd.,
- Toshiba Infrastructure Systems & Solutions Corporation,
- Renesas Electronics Corporation,
- Gallium Semiconductor,
- GaNpower
Market Segmentation:
The GaN Semiconductor Device Market is segmented on the basis of type, device, application, vertical, and voltage range. Based on type, the market is segmented as opto-semiconductor, R.F. semiconductors, and power semiconductors. The device segment includes discrete semiconductors and integrated semiconductors. By application, the market is segmented into lighting & lasers, power drives, supplies & inverters, and radio frequency (R.F.). The power drives segment includes LiDAR, industrial drives, and E.V. drives. By suppliers & inverters, the market is segmented into SMPS, inverters, wireless charging, and E.V. charging. The radio frequency (R.F.) segment includes a front-end module (FEM), repeater/booster/DAS, radar & satellite. Based on vertical, the market is divided as consumer & business enterprises, industrial, automotive, telecommunications, aerospace & defence, healthcare, and energy & power. The voltage range segment includes less than 100 V, 100-500 V, and more than 500 V.
Based On Type, The Opto-Semiconductor Segment Is Accounted As A Major Contributor In The GaN Semiconductor Device Market
The opto-semiconductor category is expected to hold a major share in the global GaN Semiconductor Device Market in 2024. This is largely due to the use of opto-semiconductors in devices like LEDs, solar cells, photodiodes, lasers, and optoelectronics. Opto-semiconductors are rapidly being used in car lights, indoor and outdoor illumination, and pulse-powered lasers. As a result, opto-semiconductors are becoming more popular in the automotive and consumer electronics industries. Furthermore, opto-semiconductors are widely employed in applications like Light Detection and Ranging (LiDAR) and pulsed laser, which bodes well for the segment's growth.
The Discrete Semiconductor Segment Witnessed Growth At A Rapid Rate
The discrete semiconductor segment is projected to grow at a rapid rate in the global GaN Semiconductor Device Market. Individually packaged and marketed discrete GaN semiconductor components include GaN transistors and GaN diodes. These parts are found in a variety of applications, including power supply units, inverters, and radio frequency (R.F.) amplifiers. GaN transistors and diodes efficiently handle high voltage and current levels, resulting in strong designs. Furthermore, they enable more compact and lightweight circuits appropriate for applications where size and weight constraints are critical.
In The Region, The North American GaN Semiconductor Device Market Holds A Significant Revenue Share
The North American GaN Semiconductor Device Market is expected to record the maximum market share in revenue in the near future. Rising R&D spending in the defence and aerospace industries is supporting regional market expansion. Furthermore, government investment in semiconductor startups will likely drive the regional market. Furthermore, the region's GaN semiconductor devices business is rising as a result of the expanding consumer electronics market. The United States has the largest portion of the regional market due to its fast-expanding aircraft industry. The North American GaN semiconductor devices market is expected to continue to lead the global industry throughout the study period. Moreover, Asia Pacific is estimated to grow at a significant rate in the coming years. The presence of established semiconductor manufacturing companies such as Toshiba (Japan), Nichia Corporation (Japan), and Mitsubishi Electric (Japan), increasing integration in consumer and business enterprise verticals, and government-led initiatives for innovation and industrial development are the major factors driving Asia Pacific market growth.
Recent Developments:
- In June 2023, NexGen has just declared the commencement of production for the world's first 700V and 1200V vertical GaN semiconductors, which exhibit the most elevated switching frequencies. The 1200V Vertical GaN e-mode Fin-jFETs developed by NexGen were the sole wide-band-gap devices that effectively exhibited switching frequencies exceeding 1 MHz at a rated voltage of 1.4kV.
- In Dec 2021, Microchip Technology, Inc. announced a substantial expansion of its Gallium Nitride (GaN) Radio Frequency (RF) power device portfolio with the addition of new MMICs and discrete transistors covering frequencies up to 20 gigahertz (GHz). Combining high power-added efficiency (PAE) and high linearity, the devices enabled new levels of performance in applications spanning from 5G to electronic warfare, satellite communications, commercial and defence radar systems, and test equipment.
GaN Semiconductor Device Market Report Scope:
|
Report Attribute |
Specifications |
|
Market Size Value In 2023 |
USD 20.50 Bn |
|
Revenue Forecast In 2031 |
USD 32.92 Bn |
|
Growth Rate CAGR |
CAGR of 6.23% from 2024 to 2031 |
|
Quantitative Units |
Representation of revenue in US$ Bn, Volume (Units) and CAGR from 2024 to 2031 |
|
Historic Year |
2019 to 2023 |
|
Forecast Year |
2024-2031 |
|
Report Coverage |
The forecast of revenue, the position of the company, the competitive market structure, growth prospects, and trends |
|
Segments Covered |
By Type, Device, Application, Voltage Range, and Vertical |
|
Regional Scope |
North America; Europe; Asia Pacific; Latin America; Middle East & Africa |
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Country Scope |
U.S.; Canada; U.K.; Germany; China; India; Japan; Brazil; Mexico ;The UK; France; Italy; Spain; China; Japan; India; South Korea; South East Asia; South Korea; South East Asia |
|
Competitive Landscape |
Wolfspeed, Inc. (US), Qorvo, Inc. (US), MACOM Technology Solutions Holdings, Inc. (US), Infineon Technologies AG (Germany), Sumitomo Electric Industries, Ltd. (Japan), Mitsubishi Electric Group (Japan), NexGen Power Systems. (US), GaN Systems (Canada), Efficient Power Conversion Corporation (US), Odyssey Semiconductor Technologies, Inc. (US), ROHM Co., Ltd. (Japan), STMicroelectronics N.V. (Switzerland), NXP Semiconductors N.V. (Netherlands), Transphorm, Inc., Analog Devices, Inc., Texas Instruments Incorporated, Navitas Semiconductor, Microchip Technology Incorporated, Powdec, Northrop Grumman Corporation, Shindengen Electric Manufacturing Co., Ltd., Toshiba Infrastructure Systems & Solutions Corporation, Renesas Electronics Corporation, Gallium Semiconductor, GaNpower |
|
Customization Scope |
Free customization report with the procurement of the report, Modifications to the regional and segment scope. Particular Geographic competitive landscape. |
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Pricing And Available Payment Methods |
Explore pricing alternatives that are customized to your particular study requirements. |
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