Global GaN Semiconductor Device Market Size is valued at USD 22.2 Bn in 2024 and is predicted to reach USD 40.9 Bn by the year 2034 at a 6.4% CAGR during the forecast period for 2025-2034.
Key Industry Insights & Findings from the Report:
Gallium nitride (GaN) is a semiconductor with dynamic chemical and electrical properties such as high voltage breakdown and saturation velocity. As a result, they are suitable for use in a wide range of switching devices. Because of its reduced power consumption and enhanced temperature tolerance and efficiency, gallium nitride is predicted to be a silicon substitute. Thus, gallium nitride semiconductor devices and their applications in inverters, electric vehicles, smart grid systems, communication devices, and other fields are gaining popularity.
One of the key reasons fueling the market for GaN semiconductor device applications and their use in consumer electronics and the automotive industries is the broadband gap quality of GaN, which leads to its employment in novel semiconductor devices. Furthermore, its increased use in R.F. power applications has positively impacted market growth. The rise in demand and utilization of these devices in the aerospace, medical, military, and other industries is expected to drive the market even more.
However, the COVID-19 pandemic has resulted in lockdowns in a number of major economies. As a result, electronic goods sales have decreased, and supply networks have been disrupted. Furthermore, many economies are incurring considerable revenue losses as manufacturing facilities close due to lockdowns.
Competitive Landscape:
Some Major Key Players In The GaN Semiconductor Device Market:
Market Segmentation:
The GaN Semiconductor Device Market is segmented on the basis of type, device, application, vertical, and voltage range. Based on type, the market is segmented as opto-semiconductor, R.F. semiconductors, and power semiconductors. The device segment includes discrete semiconductors and integrated semiconductors. By application, the market is segmented into lighting & lasers, power drives, supplies & inverters, and radio frequency (R.F.). The power drives segment includes LiDAR, industrial drives, and E.V. drives. By suppliers & inverters, the market is segmented into SMPS, inverters, wireless charging, and E.V. charging. The radio frequency (R.F.) segment includes a front-end module (FEM), repeater/booster/DAS, radar & satellite. Based on vertical, the market is divided as consumer & business enterprises, industrial, automotive, telecommunications, aerospace & defence, healthcare, and energy & power. The voltage range segment includes less than 100 V, 100-500 V, and more than 500 V.
Based On Type, The Opto-Semiconductor Segment Is Accounted As A Major Contributor In The GaN Semiconductor Device Market
The opto-semiconductor category is expected to hold a major share in the global GaN Semiconductor Device Market in 2024. This is largely due to the use of opto-semiconductors in devices like LEDs, solar cells, photodiodes, lasers, and optoelectronics. Opto-semiconductors are rapidly being used in car lights, indoor and outdoor illumination, and pulse-powered lasers. As a result, opto-semiconductors are becoming more popular in the automotive and consumer electronics industries. Furthermore, opto-semiconductors are widely employed in applications like Light Detection and Ranging (LiDAR) and pulsed laser, which bodes well for the segment's growth.
The Discrete Semiconductor Segment Witnessed Growth At A Rapid Rate
The discrete semiconductor segment is projected to grow at a rapid rate in the global GaN Semiconductor Device Market. Individually packaged and marketed discrete GaN semiconductor components include GaN transistors and GaN diodes. These parts are found in a variety of applications, including power supply units, inverters, and radio frequency (R.F.) amplifiers. GaN transistors and diodes efficiently handle high voltage and current levels, resulting in strong designs. Furthermore, they enable more compact and lightweight circuits appropriate for applications where size and weight constraints are critical.
In The Region, The North American GaN Semiconductor Device Market Holds A Significant Revenue Share
The North American GaN Semiconductor Device Market is expected to record the maximum market share in revenue in the near future. Rising R&D spending in the defence and aerospace industries is supporting regional market expansion. Furthermore, government investment in semiconductor startups will likely drive the regional market. Furthermore, the region's GaN semiconductor devices business is rising as a result of the expanding consumer electronics market. The United States has the largest portion of the regional market due to its fast-expanding aircraft industry. The North American GaN semiconductor devices market is expected to continue to lead the global industry throughout the study period. Moreover, Asia Pacific is estimated to grow at a significant rate in the coming years. The presence of established semiconductor manufacturing companies such as Toshiba (Japan), Nichia Corporation (Japan), and Mitsubishi Electric (Japan), increasing integration in consumer and business enterprise verticals, and government-led initiatives for innovation and industrial development are the major factors driving Asia Pacific market growth.
Recent Developments:
GaN Semiconductor Device Market Report Scope:
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Report Attribute |
Specifications |
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Market Size Value In 2024 |
USD 22.2 Bn |
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Revenue Forecast In 2034 |
USD 40.9 Bn |
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Growth Rate CAGR |
CAGR of 6.4% from 2025 to 2034 |
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Quantitative Units |
Representation of revenue in US$ Bn, Volume (Units) and CAGR from 2025 to 2034 |
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Historic Year |
2021 to 2024 |
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Forecast Year |
2025-2034 |
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Report Coverage |
The forecast of revenue, the position of the company, the competitive market structure, growth prospects, and trends |
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Segments Covered |
By Type, Device, Application, Voltage Range, and Vertical |
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Regional Scope |
North America; Europe; Asia Pacific; Latin America; Middle East & Africa |
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Country Scope |
U.S.; Canada; U.K.; Germany; China; India; Japan; Brazil; Mexico ;The UK; France; Italy; Spain; China; Japan; India; South Korea; South East Asia; South Korea; South East Asia |
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Competitive Landscape |
Wolfspeed, Inc. (US), Qorvo, Inc. (US), MACOM Technology Solutions Holdings, Inc. (US), Infineon Technologies AG (Germany), Sumitomo Electric Industries, Ltd. (Japan), Mitsubishi Electric Group (Japan), NexGen Power Systems. (US), GaN Systems (Canada), Efficient Power Conversion Corporation (US), Odyssey Semiconductor Technologies, Inc. (US), ROHM Co., Ltd. (Japan), STMicroelectronics N.V. (Switzerland), NXP Semiconductors N.V. (Netherlands), Transphorm, Inc., Analog Devices, Inc., Texas Instruments Incorporated, Navitas Semiconductor, Microchip Technology Incorporated, Powdec, Northrop Grumman Corporation, Shindengen Electric Manufacturing Co., Ltd., Toshiba Infrastructure Systems & Solutions Corporation, Renesas Electronics Corporation, Gallium Semiconductor, GaNpower |
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Customization Scope |
Free customization report with the procurement of the report, Modifications to the regional and segment scope. Particular Geographic competitive landscape. |
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Pricing And Available Payment Methods |
Explore pricing alternatives that are customized to your particular study requirements. |
GaN Semiconductor Device Market By Type-
GaN Semiconductor Device Market By Device-
GaN Semiconductor Device Market By Application-
GaN Semiconductor Device Market By Vertical-
GaN Semiconductor Device Market By Voltage Range-
GaN Semiconductor Device Market By Region-
North America-
Europe-
Asia-Pacific-
Latin America-
Middle East & Africa-
InsightAce Analytic follows a standard and comprehensive market research methodology focused on offering the most accurate and precise market insights. The methods followed for all our market research studies include three significant steps – primary research, secondary research, and data modeling and analysis - to derive the current market size and forecast it over the forecast period. In this study, these three steps were used iteratively to generate valid data points (minimum deviation), which were cross-validated through multiple approaches mentioned below in the data modeling section.
Through secondary research methods, information on the market under study, its peer, and the parent market was collected. This information was then entered into data models. The resulted data points and insights were then validated by primary participants.
Based on additional insights from these primary participants, more directional efforts were put into doing secondary research and optimize data models. This process was repeated till all data models used in the study produced similar results (with minimum deviation). This way, this iterative process was able to generate the most accurate market numbers and qualitative insights.
Secondary research
The secondary research sources that are typically mentioned to include, but are not limited to:
The paid sources for secondary research like Factiva, OneSource, Hoovers, and Statista
Primary Research:
Primary research involves telephonic interviews, e-mail interactions, as well as face-to-face interviews for each market, category, segment, and subsegment across geographies
The contributors who typically take part in such a course include, but are not limited to:
Data Modeling and Analysis:
In the iterative process (mentioned above), data models received inputs from primary as well as secondary sources. But analysts working on these models were the key. They used their extensive knowledge and experience about industry and topic to make changes and fine-tuning these models as per the product/service under study.
The standard data models used while studying this market were the top-down and bottom-up approaches and the company shares analysis model. However, other methods were also used along with these – which were specific to the industry and product/service under study.
To know more about the research methodology used for this study, kindly contact us/click here.
